Intel [NASDAQ:INTC] and Micron has announced a new benchmark in NAND flash technology – the world’s first 20 nanometer (nm), 128 gigabit (Gb), multilevel-cell (MLC) device. The new 20nm monolithic 128Gb device is claimed to be the first in the industry to enable a terabit (Tb) of data storage in a fingertip-size package by using just eight die.
“As portable devices get smaller and sleeker, and server demands increase, our customers look to Micron for innovative new storage technologies and system solutions that meet these challenges,” said Glen Hawk, vice president of Micron’s NAND Solutions Group. “Our collaboration with Intel continues to deliver leading NAND technologies and expertise that are critical to building those systems.”
|World’s Highest-Capacity NAND flash memory die — New 20nm NAND from Intel and Micron provides unprecedented storage density. The industry’s first monolithic 128 gigabit (Gb) part can store 1 terabit of data in a single fingertip-size package with just eight die—a new storage benchmark that meets the ongoing demand for slim, sleek products.|
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The companies also announced mass production of their 64Gb 20nm NAND, which further extends the companies’ leadership in NAND process technology.
The companies also revealed that the key to their success with 20nm process technology is due to an innovative new cell structure that enables more aggressive cell scaling than conventional architectures.